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Dragon Lasers :: Laser Diode Array :: Linear Arrays Device Specifications - 808nm Lasers

Linear Arrays - Laser Diodes

Linear Arrays Device Specifications


Optical

Center Wavelength( nm)

808

808

808

808

Output Power(W)

120(CW)

240(CW)

360(CW)

1200(QCW)

number of bars

1~6

1~6

1~6

1~12

Center Wavelength tolerance (nm)

±3.0

±3.0

±3.0

±3.0

Bar Length (cm)

1

1

1

1

Emitter Aera(μm2)

150×1

150×1

150×1

100×1

Emitter size(μm)

150

150

150

100

Emitter Spacing(μm)

500

500

500

200

Spectral Width(FWHM)(nm)

﹤3

﹤3

﹤3

﹤3

Slope Efficiency (W/A)

﹥1.1

﹥1.1

﹥1.1

﹥1.2

Polarization

TM

TM

TM

TM

Beam divergence

﹤36°⊥﹤10°∥

﹤36°⊥﹤10°∥

﹤36°⊥﹤10°∥

﹤36°⊥﹤10°∥

Wavelength Temp. Coefficient

0.29nm/℃

0.28 nm /℃

0.28 nm /℃

0.28 nm /℃

Electrical

Power Conversion Efficiency

﹥40%

﹥40%

﹥40%

﹥40%

Threshold Current (ITH)(A)

6.5

6.5

6.5

10.0

Operating Current(IOP) (A)

25

40

65

75

Operating Voltage(VOP )(V)

﹤2.5

﹤2.5

﹤2.5

﹤20

Series Resistance(RS)(Ω)

﹤0.015

﹤0.015

﹤0.015

﹤0.015

Mechanical Specifications

Storage Temp. Range(℃)

10-80

10-80

10-80

10-80

Thermal

Thermal  Rsistance (°C/W)

0.36

0.35

0.35

0.35

Operating Temp.(℃)

20-35

20-35

20-35

20-35

 

 

 

 

 

 

 

 

 

 

Linear Arrays Device Specifications - 808nm Lasers
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