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Dragon Lasers :: Laser Diode Array :: Single Emitter Laser Diodes 808nm

Single Emitter Laser Diodes - Laser Diodes

Single Emitter Device Specifications


Optical

Center Wavelength( nm)

808

808

808

Output Power(W)

1.2

2.5

3.0

Center Wavelength tolerance (nm)

±3

±3

±3

Emitter Aera(μm)

100×1

150×1

100×1

Emitter size(μm)

100

150

100

Spectral Width(FWHM)(nm)

﹤3

﹤3

﹤3

Slope Efficiency (W/A)

﹥1.1

﹥1.1

﹥1.1

Polarization

TM

TM

TM

Beam divergence

﹤36°⊥﹤10°∥

﹤36°⊥﹤10°∥

﹤36°⊥﹤10°∥

Wavelength Temp. Coefficient

0.28 nm /℃

0.28 nm /℃

0.28 nm /℃

Electrical

Power Conversion Efficiency

﹥50%

﹥50%

﹥50%

Threshold Current (ITH)(mA)

300

450

400

Operating Current(IOP) (A)

1.3

2.5

2.8

Operating Voltage(VOP )(V)

1.85

1.85

1.85

Series Resistance(RS)(Ω)

0.15

0.15

0.15

Mechanical

Storage Temp. Range(℃)

10-40

10-40

10-40

Thermal

Thermal  Rsistance (°C/W)

0.1

0.1

0.1

Operating Temp.(℃)

20-35

20-35

20-35

Single Emitter Laser Diodes 808nm
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