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Dragon Lasers :: Laser Diode Array :: Vertical High Power Laser Diode Arrays

Vertical High Power Laser Diode Arrays - Laser Diodes

Vertical High Power Diode Arrays Device Specifications


Parameter

LS-200-08XX

LS-400-08XX

LS-600-08XX

LS-400-09XX

Optical

Center Wavelength( nm)

790~850

790~850

790~850

910~980

Output Power(W)

200

400

600

400

number of bars

10

10

15

10

Center Wavelength tolerance (nm)

±3

±3

±3

±3

Bar Length (cm)

1

1

1

1

Emitter Aera(μm)

100×1

100×1

100×1

100×1

Emitter size(μm)

100

100

100

100

Emitter Spacing(μm)

200

200

200

200

Spectral Width(FWHM)(nm)

﹤3

﹤3

﹤3

﹤3

Slope Efficiency (W/A)

﹥1.1

﹥1.1

﹥1.1

﹥1.2

Polarization

TM

TM

TM

TE

Beam divergence

﹤36°⊥﹤10°∥

﹤36°⊥﹤10°∥

﹤36°⊥﹤10°∥

﹤36°⊥﹤10°∥

Wavelength Temp. Coefficient

0.29nm/℃

0.28 nm /℃

0.28 nm /℃

0.28 nm /℃

Electrical

Power Conversion Efficiency

﹥48%

﹥46%

﹥46%

﹥50%

Threshold Current (ITH)(A)

14.2

14.0

14.0

10.0

Operating Current(IOP) (A)

66

65

65

75

Operating Voltage(VOP )(V)

﹤20

﹤20

﹤30

﹤20

Series Resistance(RS)(Ω)

﹤0.08

﹤0.07

﹤0.1

﹤0.1

Mechanical

Storage Temp. Range(℃)

10-40

10-40

10-40

10-40

Bar Spacing(mm)

1.8

1.8

1.8

1.8

Thermal

Thermal  Rsistance (°C/W)

0.36

0.35

0.35

0.35

Operating Temp.(℃)

20-35

20-35

20-35

20-35

Vertical High Power Laser Diode Arrays
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